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InGaN-based superluminescent laser diode

Based on

1 Articles
2014 Most recent source

Composition

1

p-electrode

Type Complex Compound
Formula
Role p-type electrode
2

Si-doped GaN

Type Complex Compound
Formula
Role substrate
3

aluminium gallium nitride

aluminum gallium nitride Al0.2Ga0.8N AlGaN
Type Single Compound
Formula Al0.2Ga0.8N
Role cladding layer
4

Si-doped GaN

Type Complex Compound
Formula
Role cladding layer
5

Si-doped indium gallium nitride

Si-doped InGaN
Type Complex Compound
Formula
Role wave-guiding layer
6

In0.17Ga0.83N/In0.02Ga0.98N multi-quantum wells

In0.17Ga0.83N/In0.02Ga0.98N MQW
Type Nano Material
Formula
Role well layer
7

indium gallium nitride

InGaN
Type Complex Compound
Formula
Role wave-guiding layer
8

Mg-doped Al0.20Ga0.80N

Type Complex Compound
Formula
Role hole transport layer
9

indium gallium nitride

Type Single Compound
Formula In0.17Ga0.83N
Role cladding layer
10

Mg-doped GaN

Type Complex Compound
Formula
Role cladding layer
11

Mg-doped GaN

Type Complex Compound
Formula
Role contacting layer
12

silicon dioxide

silicic oxide silica
Type
Formula SiO2
Role
13

n-electrode

Type Complex Compound
Formula
Role n-type electrode

Properties

General physical and chemical properties

Property Value Source
light intensity

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Applications

Area Application Source
lighting devices

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Characterization

Method Source
electroluminescence dependent on current intensity

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Biological effects

Preparation

Method 1

Type: Chemical synthesis
Source:
Starting materials
  • trimethylindigane
  • ammonia
  • trimethanidogallium
See all (6)
Product

InGaN-based superluminescent laser diode

Method 2

Type: Chemical synthesis
Source:
Starting materials
  • trimethylindigane
  • ammonia
  • trimethanidogallium
See all (6)
Product

InGaN-based superluminescent laser diode

Method 3

Type: Chemical synthesis
Source:
Starting materials
  • trimethylindigane
  • ammonia
  • trimethanidogallium
See all (6)
Product

InGaN-based superluminescent laser diode

References

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