Loading ...

quantum-cascade-like device

Based on

2 Articles
2011 Most recent source

Composition

1

low temperature gallium arsenide

gallium(III) arsenide gallium arsenide LTGaAs GaAs
Type
Formula GaAs
Role
2

InAs quantum dots

Type
Formula
Role
3

AlGaAs

Type
Formula
Role
4

gallium aluminium arsenide

gallium aluminium arsenide aluminum gallium arsenide
Type
Formula Al0.3Ga0.7As
Role
5

Al0.3Ga0.7As film

Type
Formula
Role
6

AlAs film

Type
Formula
Role

Properties

General physical and chemical properties

Property Value Nanomaterial Variant Source
electric current dependent on dopant presence during nanowire preparation

More information/entries available to subscribers only.

Or, view sample content

Applications

Area Application Nanomaterial Variant Source
electronics

More information available to subscribers only.

Or, view sample content

Characterization

Biological effects

Preparation

Method 1

Type: Physical formation
Source:
Starting materials
Product

quantum-cascade-like device

Size: not specified

Medium/Support: none

Method 2

Type: Physical formation
Source:
Starting materials
Product

quantum-cascade-like device

Size: not specified

Medium/Support: none

References

Full content is available to subscribers only

To view content please choose from the following:

We use cookies to improve your experience with our site. More information

Sign up for a free trial