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GaAs nanowire-based device

Based on

1 Articles
2011 Most recent source

Composition

1

low temperature gallium arsenide

gallium(III) arsenide gallium arsenide LTGaAs GaAs
Type
Formula GaAs
Role
2

silicon nitride layer

SiNx layer
Type
Formula
Role
3

GaAs nanowires

Type
Formula
Role
4

germanium layer

Type
Formula
Role
5

10 nm thick nickel layer

nickel thin film Ni thin film nickel layer nickel film Ni layer Ni film
Type
Formula
Role
6

gold

Type
Formula Au
Role

Properties

General physical and chemical properties

Property Value Source
electric current dependent on dopant presence during nanowire preparation

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Applications

Area Application Source
electronics

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Characterization

Biological effects

Preparation

Method 1

Type: Physical formation
Source:
Starting materials
Product

GaAs nanowire-based device

Method 2

Type: Physical formation
Source:
Starting materials
Product

GaAs nanowire-based device

References

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