Fast insight into nanotechnology

Access easily searchable nanoscience data, synthesis methods and literature

GaInNAs-based Hellish-vertical cavity semiconductor optical amplifier

Based on

1 Articles
2011 Most recent source

Composition

1

low temperature gallium arsenide

gallium(III) arsenide gallium arsenide LTGaAs GaAs
Type
Formula GaAs
Role
2

aluminium arsenide layer

AlAs layer
Type
Formula
Role
3

doped aluminium arsenide/gallium arsenide bilayer

doped AlAs/GaAs bilayer
Type
Formula
Role
4

aluminium arsenide/gallium arsenide bilayers

AlAs/GaAs bilayers
Type
Formula
Role
5

silicon-doped gallium arsenide layer

Si-doped GaAs layer
Type
Formula
Role
6

GaAs/Ga0.35In0.65N0.02As0.08/GaAs trilayers

Type
Formula
Role
7

carbon-doped gallium arsenide layer

C-doped GaAs layer
Type
Formula
Role
8

aluminium arsenide/gallium arsenide bilayers

AlAs/GaAs bilayers
Type
Formula
Role
9

gold

Type
Formula Au
Role
10

germanium gold alloy

GeAu
Type
Formula
Role
11

nickel

Type
Formula Ni
Role

Properties

General physical and chemical properties

Property Value Source

Full content is available to subscribers only

To view content please choose from the following:

Applications

Area Application Source

Full content is available to subscribers only

To view content please choose from the following:

Characterization

Method Source

Full content is available to subscribers only

To view content please choose from the following:

Biological effects

Preparation

Method 1

Type: Physical formation
Source:
Starting materials
  • low temperature gallium arsenide
  • aluminium(III) arsenide
Product

GaInNAs-based Hellish-vertical cavity semiconductor optical amplifier

References

Full content is available to subscribers only

To view content please choose from the following:

We use cookies to improve your experience with our site. More information

Sign up for a free trial