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GaInNAs-based Hellish-vertical cavity semiconductor optical amplifier

Based on

1 Articles
2011 Most recent source

Composition

1

low temperature gallium arsenide

gallium(III) arsenide gallium arsenide LTGaAs GaAs
Type
Formula AsGa
Role
2

aluminium arsenide layer

AlAs layer
Type
Formula
Role
3

doped aluminium arsenide/gallium arsenide bilayer

doped AlAs/GaAs bilayer
Type
Formula
Role
4

aluminium arsenide/gallium arsenide bilayers

AlAs/GaAs bilayers
Type
Formula
Role
5

silicon-doped gallium arsenide layer

Si-doped GaAs layer
Type
Formula
Role
6

GaAs/Ga0.35In0.65N0.02As0.08/GaAs trilayers

Type
Formula
Role
7

carbon-doped gallium arsenide layer

C-doped GaAs layer
Type
Formula
Role
8

aluminium arsenide/gallium arsenide bilayers

AlAs/GaAs bilayers
Type
Formula
Role
9

gold

Type
Formula Au
Role
10

germanium gold alloy

GeAu
Type
Formula
Role
11

nickel

Type
Formula Ni
Role

Properties

General physical and chemical properties

Property Value Nanomaterial Variant Source
cavity resonance position

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Applications

Area Application Nanomaterial Variant Source
optoelectronics

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Characterization

Method Nanomaterial Variant Source
electroluminescence

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Biological effects

Preparation

Method 1

Type: Physical formation
Source:
Starting materials
  • low temperature gallium arsenide
  • aluminium(III) arsenide
Product

GaInNAs-based Hellish-vertical cavity semiconductor optical amplifier

Size: not specified

Medium/Support: none

References

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