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a-IGZO/TaOx resistance random access memory

Based on

1 Articles
2014 Most recent source

Composition

1

SiO2/Si wafer

Type Complex Compound
Formula
Role substrate
2

titanium

Type Single Compound
Formula Ti
Role adhesion layer
3

tungsten

Type Single Compound
Formula W
Role electrodes
4

aluminium oxide

aluminum oxide alumina
Type
Formula Al2O3
Role
5

a-IGZO/TaOx layer

Type Nano Material
Formula
Role switching layer
6

molybdenum

Type Single Compound
Formula Mo
Role electrodes

Properties

General physical and chemical properties

Property Value Source
electric current

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Applications

Area Application Source
data storage

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Characterization

Biological effects

Preparation

Method 1

Type: Chemical synthesis
Source:
Starting materials
  • SiO2/Si wafer
  • titanium
  • tungsten
Product

a-IGZO/TaOx resistance random access memory

References

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