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back-gate field-effect transistor

Based on

1 Articles
2011 Most recent source

Composition

1

n-doped silicon

n+Si
Type
Formula
Role
2

SiO2 layer

Type
Formula
Role
3

phosphorus-doped ZnO nanowires

P-doped p-type ZnO nanowires P-doped ZnO nanowires
Type
Formula
Role
4

Ni layer

Type
Formula
Role
5

Au layer

Type
Formula
Role

Properties

General physical and chemical properties

Property Value Source
drain-source current dependent on gate voltage

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Applications

Area Application Source
electronics

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Characterization

Biological effects

Preparation

Method 1

Type: Physical formation
Source:
Starting materials
Product

back-gate field-effect transistor

References

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