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PCBM-TFT with pristine SiNx gate insulator

Based on

1 Articles
2013 Most recent source

Composition

1

soda-lime-silica glass

soda-lime glass glass
Type Complex Compound
Formula
Role substrate
2

tin-doped indium oxide

indium tin oxide ITO
Type Complex Compound
Formula
Role gate
3

silicon-rich silicon nitride

Si-reached silicon nitride silicon nitride a-SiNx SRSN
Type Single Compound
Formula SiN(x)
Role dielectric layer
4

[6,6]-phenyl-C61-butyric acid methyl ester

[6,6]-phenyl-C61-butyric acid methyl ester PCBM
Type Single Compound
Formula C72H14O2
Role semiconductors
5

aluminium

aluminum
Type Single Compound
Formula Al
Role source
6

aluminium

aluminum
Type Single Compound
Formula Al
Role drain

Properties

General physical and chemical properties

Property Value Nanomaterial Variant Source
drain current

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Applications

Area Application Nanomaterial Variant Source
electronics

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Characterization

Biological effects

Preparation

Method 1

Type: Physical formation
Source:
Starting materials
  • soda-lime-silica glass
  • tin-doped indium oxide
Product

PCBM-TFT with pristine SiNx gate insulator

Size: not specified

Medium/Support: none

References

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