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four-wire field-effect transistor

Based on

3 Articles
2011 Most recent source

Composition

1

280 nm thick thermal silicon oxide layer

Type
Formula
Role
2

silicon

Type
Formula Si
Role
3

graphene nanosheets

graphene sheets graphene
Type
Formula
Role
4

7 nm thick chromium layer

Type
Formula
Role
5

70 nm thick gold layer

Au electrode gold layers gold layer gold film Au layer Au film Au
Type
Formula
Role
6

Al rectangular plate

Type
Formula
Role

Properties

General physical and chemical properties

Property Value Nanomaterial Variant Source
conductance

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Applications

Area Application Nanomaterial Variant Source
electronics

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Characterization

Biological effects

Preparation

Method 1

Type: Physical formation
Source:
Starting materials
  • silicon
Product

four-wire field-effect transistor

Size: not specified

Medium/Support: none

Method 2

Type: Physical formation
Source:
Starting materials
Product

four-wire field-effect transistor

Size: not specified

Medium/Support: none

Method 3

Type: Physical formation
Source:
Starting materials
Product

four-wire field-effect transistor

Size: not specified

Medium/Support: none

Method 4

Type: Physical formation
Source:
Starting materials
  • silicon
Product

four-wire field-effect transistor

Size: not specified

Medium/Support: none

Method 5

Type: Physical formation
Source:
Starting materials
Product

four-wire field-effect transistor

Size: not specified

Medium/Support: none

References

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