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HfO2/SRSO/SiO2 floating gate memory device

Based on

1 Articles
2011 Most recent source

Composition

1

p-doped silicon

p-Si
Type
Formula
Role
2

HfO2 layer

Type
Formula
Role
3

SRSO layer with embedded Si nanocrystals

Si nanocrystals-SiO2
Type
Formula
Role
4

10-nm-thick SiO2 layer

silica thin film silica nanofilm SiO2 thin film SiO2 nanofilm silica layer SiO2 layer SiO2 film
Type
Formula
Role
5

aluminium

aluminum
Type
Formula Al
Role

Properties

General physical and chemical properties

Property Value Source
capacitance dependent on frequency

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Applications

Area Application Source
data storage

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Characterization

Biological effects

Preparation

Method 1

Type: Chemical synthesis
Source:
Starting materials
  • hafnium(IV) oxide
  • p-doped silicon
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  2. VUcgCC8iS9RsB6d7ckO02a
  3. 17FwHvQjhWjl8m8mPxDotkyWn2nuAmYP
  4. dHZD8mr7VQznAdaC9UlMB
Product

HfO2/SRSO/SiO2 floating gate memory device

References

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