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ion field effect transistor based on wrinkled InGaAs nanomembranes

Based on

1 Articles
2011 Most recent source

Composition

1

low temperature gallium arsenide

gallium(III) arsenide gallium arsenide LTGaAs GaAs
Type
Formula GaAs
Role
2

GaAs film

Type
Formula
Role
3

wrinkled In0.2Ga0.8As nanomembrane

In0.2Ga0.8As layer
Type
Formula
Role
4

Al2O3 layer

Type
Formula
Role
5

chromium

Type
Formula Cr
Role
6

80 nm-thick gold layer

gold layer gold film Au layer Au films Au film
Type
Formula
Role
7

SU-8

Type
Formula
Role
8

polydimethylsiloxane

PDMS
Type
Formula
Role

Properties

General physical and chemical properties

Property Value Source

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Applications

Area Application Source

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Characterization

Biological effects

Preparation

Method 1

Type: Chemical synthesis
Source:
Starting materials
  • arsenic
  • low temperature gallium arsenide
  • gallium
Product

ion field effect transistor based on wrinkled InGaAs nanomembranes

References

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