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ion field effect transistor based on wrinkled InGaAs nanomembranes

Based on

2 Articles
2011 Most recent source

Composition

1

low temperature gallium arsenide

gallium(III) arsenide gallium arsenide LTGaAs GaAs
Type
Formula AsGa
Role
2

100 nm thick GaAs Si-doped buffer layer

Type
Formula
Role
3

0.3 nm thick Au layer

Type
Formula
Role
4

GaAs Be-doped nanowires

Type
Formula
Role
5

PMMA

Type
Formula
Role
6

30 nm thick AuGe layer

Type
Formula
Role
7

10 nm thick nickel layer

nickel thin film Ni thin film nickel layer nickel film Ni layer Ni film
Type
Formula
Role
8

150 nm thick gold layer

150 nm thick Au layer gold layer
Type
Formula
Role

Properties

General physical and chemical properties

Property Value Nanomaterial Variant Source
conductance

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Applications

Area Application Nanomaterial Variant Source
electronics

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Characterization

Biological effects

Preparation

Method 1

Type: Chemical synthesis
Source:
Starting materials
  • arsenic
  • low temperature gallium arsenide
  • gallium
Product

ion field effect transistor based on wrinkled InGaAs nanomembranes

Size: not specified

Medium/Support: none

References

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