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p-type modulation-doped GaInNAs/GaAs multi-QW structure

Based on

3 Articles
2011 Most recent source

Composition

1

low temperature gallium arsenide

gallium(III) arsenide gallium arsenide LTGaAs GaAs
Type
Formula AsGa
Role
2

Al0.33Ga0.67As layer

Type
Formula
Role
3

δ-doped GaAs layer

Type
Formula
Role
4

Al0.33Ga0.67As layer

Type
Formula
Role
5

Si-doped Al0.33Ga0.67As layer

Type
Formula
Role
6

GaAs quantum well

GaAs layer GaAs QW
Type
Formula
Role

Properties

General physical and chemical properties

Property Value Nanomaterial Variant Source
charge carrier density

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Applications

Area Application Nanomaterial Variant Source
electronics

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Characterization

Biological effects

Preparation

Method 1

Type: Chemical synthesis
Source:
Starting materials
  • arsenic
  • low temperature gallium arsenide
  • gallium
Product

p-type modulation-doped GaInNAs/GaAs multi-QW structure

Size: not specified

Medium/Support: none

Method 2

Type: Chemical synthesis
Source:
Starting materials
  • arsenic
  • low temperature gallium arsenide
  • gallium
Product

p-type modulation-doped GaInNAs/GaAs multi-QW structure

Size: not specified

Medium/Support: none

Method 3

Type: Physical formation
Source:
Starting materials
Product

p-type modulation-doped GaInNAs/GaAs multi-QW structure

Size: not specified

Medium/Support: none

Method 4

Type: Physical formation
Source:
Starting materials
Product

p-type modulation-doped GaInNAs/GaAs multi-QW structure

Size: not specified

Medium/Support: none

References

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