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field-effect transistor with a bottom-gate, bottom-contact geometry

Based on

1 Articles
2011 Most recent source

Composition

1

silicon

Type
Formula Si
Role
2

150 nm-thick thermally grown silicon dioxide

150 nm thick silicon dioxide film 150 nm-thick silica layer 150 nm-thick SiO2 layer 150 nm thick SiO2 layer 150-nm-thick SiO2 layer
Type
Formula
Role
3

3 nm-thick titanium layer

3 nm-thick titanium layer
Type
Formula
Role
4

gold

Type
Formula Au
Role
5

1,1,1,3,3,3-hexamethyldisilazane

bis(trimethylsilyl)amine trimethylsilyl moiety hexamethyl disilazane hexamethyldisilazane hexamethyldisilane HDMS HMDS
Type
Formula (CH3)3SiNHSi(CH3)3
Role
6

poly[(4,4-didodecyldithieno[3,2-b:2',3'-d]silole)-2,6-diyl-alt-(2,1,3-benzothiadiazole)-4,7-diyl] thin film

Type
Formula
Role

Properties

General physical and chemical properties

Property Value Source
charge carrier mobility

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Applications

Characterization

Biological effects

Preparation

References

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