Fast insight into nanotechnology

Access easily searchable nanoscience data, synthesis methods and literature

semiconductor device

Based on

1 Patents
2013 Most recent source

Composition

1

p-doped silicon

p-Si
Type Complex Compound
Formula
Role substrate
2

n-doped indium phosphide

n-InP
Type Complex Compound
Formula
Role buffer layer
3

p-doped indium phosphide

p-InP
Type Complex Compound
Formula
Role current blocking layer
4

indium aluminium arsenide

InAlAs
Type Complex Compound
Formula
Role barrier layer
5

indium gallium arsenide quantum well

Type Nano Material
Formula
Role active layer
6

n+indium gallium arsenide

n+InGaAs
Type Complex Compound
Formula
Role Ohmic contacts

Properties

General physical and chemical properties

Property Value Source
drain current

0 more entry available to subscribers only.

Or, view sample content

Applications

Area Application Source
electronics

0 more entry available to subscribers only.

Or, view sample content

Characterization

Biological effects

Preparation

References

Full content is available to subscribers only

To view content please choose from the following:

We use cookies to improve your experience with our site. More information

Sign up for a free trial