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Al-doped ZnO-based transparent bipolar resistive switching random access memory device

Based on

1 Articles
2014 Most recent source

Composition

1

soda-lime-silica glass

soda-lime glass glass
Type Complex Compound
Formula
Role substrate
2

tin-doped indium oxide

indium tin oxide ITO
Type Complex Compound
Formula
Role electrodes
3

aluminum zinc oxide

Al-doped ZnO
Type Complex Compound
Formula
Role switching layer
4

tin-doped indium oxide

indium tin oxide ITO
Type Complex Compound
Formula
Role electrodes

Properties

General physical and chemical properties

Property Value Source
electric current dependent on cycle number

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Applications

Area Application Source
electronics

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Characterization

Method Source
UV

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Biological effects

Preparation

Method 1

Type: Physical formation
Source:
Starting materials
  • indium tin oxide glass
  • aluminum zinc oxide
  1. DGSPA6x6IgMrL
Product

Al-doped ZnO-based transparent bipolar resistive switching random access memory device

References

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