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large-area short multiwalled CNT forest-based photosensitive device

Based on

4 Articles
2016 Most recent source

Composition

1

silicon dioxide

silicic oxide silica
Type
Formula SiO2
Role
2

CH3NH3PbI3 nanowires

CH3NH3PbI3 NW
Type
Formula
Role
3

silicon

Type
Formula Si
Role

Properties

General physical and chemical properties

Property Value Nanomaterial Variant Source
channel density of states dependent on gate voltage

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Applications

Area Application Nanomaterial Variant Source
electronics

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Characterization

Biological effects

Preparation

Method 1

Type: Chemical synthesis
Source:
Starting materials
  • silicon dioxide
  • molybdenum
Product

large-area short multiwalled CNT forest-based photosensitive device

Size: not specified

Medium/Support: none

Method 2

Type: Physical formation
Source:
Starting materials
Product

large-area short multiwalled CNT forest-based photosensitive device

Size: not specified

Medium/Support: none

Method 3

Type: Chemical synthesis
Source:
Starting materials
  • silicon dioxide
  • molybdenum
Product

large-area short multiwalled CNT forest-based photosensitive device

Size: not specified

Medium/Support: none

Method 4

Type: Physical formation
Source:
Starting materials
  • silicon dioxide
  1. LMmuB0RT3mcSRe
Product

large-area short multiwalled CNT forest-based photosensitive device

Size: not specified

Medium/Support: none

References

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