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TaN-gate static induction transistor

Based on

1 Articles
2014 Most recent source

Composition

1

aluminium

aluminum
Type Single Compound
Formula Al
Role drain
2

n+-doped silicon

Type Complex Compound
Formula
Role substrate
3

hafnium(IV) oxide

hafnium dioxide hafnium oxide hafnia
Type
Formula HfO2
Role
4

tantalum(III) nitride

tantalum nitride
Type Single Compound
Formula NTa
Role gate
5

aluminium oxide

aluminum oxide alumina
Type
Formula Al2O3
Role
6

nickel

Type Single Compound
Formula Ni
Role source

Properties

General physical and chemical properties

Property Value Nanomaterial Variant Source
drain current dependent on gate voltage

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Applications

Area Application Nanomaterial Variant Source
optoelectronics

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Characterization

Biological effects

Preparation

References

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