Loading ...

GaN-based metal-insulator-semiconductor diode

Based on

1 Articles
2014 Most recent source

Composition

1

sapphire

Type Single Compound
Formula Al2O3
Role substrate
2

gallium nitride

Type Single Compound
Formula GaN
Role nucleation layer
3

gallium nitride

Type
Formula GaN
Role
4

aluminium gallium nitride

aluminum gallium nitride AlGaN
Type Complex Compound
Formula
Role barrier layer
5

aluminium oxide

aluminum oxide alumina
Type Single Compound
Formula Al2O3
Role insulating layer

Properties

General physical and chemical properties

Property Value Nanomaterial Variant Source
built-in potential dependent on gallium nitride layer post-etching treatment

More information/entries available to subscribers only.

Or, view sample content

Applications

Area Application Nanomaterial Variant Source
electronics

More information available to subscribers only.

Or, view sample content

Characterization

Biological effects

Preparation

References

Full content is available to subscribers only

To view content please choose from the following:

We use cookies to improve your experience with our site. More information

Sign up for a free trial