Fast insight into nanotechnology

Access easily searchable nanoscience data, synthesis methods and literature

AlGaN/GaN high-electron-mobility transistor on silicon substrate

Based on

1 Articles
2014 Most recent source

Composition

1

crystalline silicon

c-Si cSi
Type Single Compound
Formula Si
Role substrate
2

aluminium nitride

aluminum nitride AlN
Type Single Compound
Formula AlN
Role intermediate layer
3

iron-doped gallium nitride

Type Complex Compound
Formula
Role buffer layer
4

aluminium gallium nitride

aluminum gallium nitride Al0.3Ga0.7N
Type
Formula Al0.3Ga0.7N
Role
5

gallium nitride

Type
Formula GaN
Role
6

titanium/aluminium/nickel/gold

Ti/Al/Ni/Au
Type Complex Compound
Formula
Role source
7

titanium/aluminium/nickel/gold

Ti/Al/Ni/Au
Type Complex Compound
Formula
Role drain
8

nickel/gold

Ni/Au
Type Complex Compound
Formula
Role gate

Properties

General physical and chemical properties

Property Value Source
drain current density dependent on gate voltage

More information available to subscribers only.

Or, view sample content

Applications

Area Application Source
electronics

More information available to subscribers only.

Or, view sample content

Characterization

Method Source
electroluminescence

More information available to subscribers only.

Or, view sample content

Biological effects

Preparation

Method 1

Type: Physical formation
Source:
Starting materials
  • aluminium nitride
  • crystalline silicon
Product

AlGaN/GaN high-electron-mobility transistor on silicon substrate

References

Full content is available to subscribers only

To view content please choose from the following:

We use cookies to improve your experience with our site. More information

Sign up for a free trial