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AlGaN/GaN high-electron-mobility transistor on silicon substrate

Based on

1 Articles
2014 Most recent source

Composition

1

crystalline silicon

c-Si cSi
Type Single Compound
Formula Si
Role substrate
2

aluminium nitride

aluminum nitride AlN
Type Single Compound
Formula AlN
Role intermediate layer
3

iron-doped gallium nitride

Type Complex Compound
Formula
Role buffer layer
4

aluminium gallium nitride

aluminum gallium nitride Al0.3Ga0.7N
Type
Formula Al0.3Ga0.7N
Role
5

gallium nitride

Type
Formula GaN
Role
6

titanium/aluminium/nickel/gold

Ti/Al/Ni/Au
Type Complex Compound
Formula
Role source
7

titanium/aluminium/nickel/gold

Ti/Al/Ni/Au
Type Complex Compound
Formula
Role drain
8

nickel/gold

Ni/Au
Type Complex Compound
Formula
Role gate

Properties

General physical and chemical properties

Property Value Source

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Applications

Area Application Source

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Characterization

Method Source

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Biological effects

Preparation

Method 1

Type: Physical formation
Source:
Starting materials
  • aluminium nitride
  • crystalline silicon
Product

AlGaN/GaN high-electron-mobility transistor on silicon substrate

References

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