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gallium antimonide p-i-n photodiode on gallium arsenide substrate with interfacial misfit array layer

Based on

1 Articles
2014 Most recent source

Composition

1

gallium(III) antimonide

gallium antimonide
Type Single Compound
Formula GaSb
Role substrate
2

silicon nitride

Type Single Compound
Formula Si3N4
Role passivation layer
3

highly doped gallium antimonide

n+-GaSb
Type Complex Compound
Formula
Role n-type semiconductor layer
4

doped gallium antimonide

n-GaSb
Type Complex Compound
Formula
Role n-type semiconductor layer
5

intrinsically doped gallium antimonide

i-GaSb
Type Complex Compound
Formula
Role undoped layer
6

doped gallium antimonide

p-GaSb
Type Complex Compound
Formula
Role p-type semiconducting layer
7

highly doped gallium antimonide

p+-GaSb
Type Complex Compound
Formula
Role buffer layer
8

highly doped aluminium gallium antimonide

p+-AlGaSb
Type Complex Compound
Formula
Role window layers
9

highly doped gallium antimonide

p+-GaSb
Type Complex Compound
Formula
Role contacts
10

titanium/platinum/gold

Ti/Pt/Au
Type Complex Compound
Formula
Role Ohmic contacts

Properties

General physical and chemical properties

Property Value Nanomaterial Variant Source
contact current

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Applications

Area Application Nanomaterial Variant Source
optoelectronics

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Characterization

Method Nanomaterial Variant Source
X-ray diffraction

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Biological effects

Preparation

Method 1

Type: Chemical synthesis
Source:
Starting materials
  • gallium(III) antimonide
  • highly doped gallium antimonide
Product

gallium antimonide p-i-n photodiode on gallium arsenide substrate with interfacial misfit array layer

Size: not specified

Medium/Support: none

References

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