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InGaN/GaN dot-in-a-wire light-emitting diode

Based on

1 Articles
2014 Most recent source

Composition

1

copper

Type Single Compound
Formula Cu
Role substrate
2

gold

Type Single Compound
Formula Au
Role p-type contact
3

nickel

Type Single Compound
Formula Ni
Role adhesion layer
4

InGaN/GaN dot-in-a-wire

InGaN/GaN nanowires InGaN/GaN NW
Type Nano Material
Formula
Role photoactive layer
5

titanium

Type Single Compound
Formula Ti
Role adhesion layer
6

gold

Type Single Compound
Formula Au
Role n-type contact
7

tin-doped indium oxide

indium tin oxide ITO
Type Complex Compound
Formula
Role n-type contact
8

titanium

Type Single Compound
Formula Ti
Role adhesion layer
9

gold

Type Single Compound
Formula Au
Role bond pad
10

cured polyimide

cured PI
Type
Formula
Role

Properties

General physical and chemical properties

Property Value Source

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Applications

Area Application Source

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Characterization

Method Source

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Biological effects

Preparation

Method 1

Type: Chemical synthesis
Source:
Starting materials
  1. gDowhc2nQy8y16VGg8Y9cAwdm9xmNZB3VoJXz
Product

InGaN/GaN dot-in-a-wire light-emitting diode

References

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