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programmable memory device based on BaTi0.95Co0.05O3

Based on

1 Articles
2011 Most recent source

Composition

1

silicon

Type
Formula Si
Role
2

silicon dioxide

silicic oxide silica
Type
Formula SiO2
Role
3

50 nm thick titanium layer

titanium layer Ti layer Ti film
Type
Formula
Role
4

Pt film

Type
Formula
Role
5

Co-doped BaTiO3

BTCO
Type
Formula BaTi0.95Co0.05O3
Role
6

gold

Type
Formula Au
Role

Properties

General physical and chemical properties

Property Value Source
electric current

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Applications

Area Application Source
electronics

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Characterization

Biological effects

Preparation

Method 1

Type: Physical formation
Source:
Starting materials
  • silicon dioxide
  • silicon
Product

programmable memory device based on BaTi0.95Co0.05O3

References

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