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GaN-based high electron mobility transistor

Based on

1 Articles
2014 Most recent source

Composition

Image only illustrates the order and placement of components as described in literature.

1

gallium nitride

Type
Formula GaN
Role
2

aluminium gallium nitride

aluminum gallium nitride Al0.25Ga0.75N AlGaN
Type
Formula Al0.25Ga0.75N
Role
3

oxygen-doped Al0.25GaN

Type
Formula
Role

Properties

General physical and chemical properties

Property Value Source

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Applications

Area Application Source

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Characterization

Biological effects

Preparation

References

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