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gallium antimonide p-i-n photodiode on gallium arsenide substrate with interfacial misfit array layer

Based on

1 Articles
2014 Most recent source

Composition

1

gallium arsenide

Type Single Compound
Formula GaAs
Role substrate
2

GaAs/GaSb interfacial misfit array

GaAs/GaSb IMF array
Type
Formula
Role
3

highly doped gallium antimonide

n+-GaSb
Type Complex Compound
Formula
Role n-type semiconductor layer
4

doped gallium antimonide

n-GaSb
Type Complex Compound
Formula
Role n-type semiconductor layer
5

intrinsically doped gallium antimonide

i-GaSb
Type Complex Compound
Formula
Role undoped layer
6

doped gallium antimonide

p-GaSb
Type Complex Compound
Formula
Role p-type semiconducting layer
7

highly doped gallium antimonide

p+-GaSb
Type Complex Compound
Formula
Role buffer layer
8

highly doped aluminium gallium antimonide

p+-AlGaSb
Type Complex Compound
Formula
Role window layers
9

highly doped gallium antimonide

p+-GaSb
Type Complex Compound
Formula
Role contacts
10

titanium/platinum/gold

Ti/Pt/Au
Type Complex Compound
Formula
Role Ohmic contacts
11

silicon nitride

Type Single Compound
Formula Si3N4
Role passivation layer

Properties

General physical and chemical properties

Property Value Nanomaterial Variant Source
contact current

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Applications

Area Application Nanomaterial Variant Source
optoelectronics

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Characterization

Method Nanomaterial Variant Source
transmission electron microscopy

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Biological effects

Preparation

Method 1

Type: Chemical synthesis
Source:
Starting materials
  • GaAs/GaSb interfacial misfit array
  • gallium arsenide
Product

gallium antimonide p-i-n photodiode on gallium arsenide substrate with interfacial misfit array layer

Size: not specified

Medium/Support: none

Method 2

Type: Chemical synthesis
Source:
Starting materials
  • GaAs/GaSb interfacial misfit array
  • gallium arsenide
Product

gallium antimonide p-i-n photodiode on gallium arsenide substrate with interfacial misfit array layer

Size: not specified

Medium/Support: none

Method 3

Type: Chemical synthesis
Source:
Starting materials
  • GaAs/GaSb interfacial misfit array
  • gallium arsenide
Product

gallium antimonide p-i-n photodiode on gallium arsenide substrate with interfacial misfit array layer

Size: not specified

Medium/Support: none

Method 4

Type: Chemical synthesis
Source:
Starting materials
  • GaAs/GaSb interfacial misfit array
  • gallium arsenide
Product

gallium antimonide p-i-n photodiode on gallium arsenide substrate with interfacial misfit array layer

Size: not specified

Medium/Support: none

Method 5

Type: Chemical synthesis
Source:
Starting materials
  • GaAs/GaSb interfacial misfit array
  • gallium arsenide
Product

gallium antimonide p-i-n photodiode on gallium arsenide substrate with interfacial misfit array layer

Size: not specified

Medium/Support: none

References

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