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4H-SiC metal oxide semiconductor capacitor

Based on

1 Articles
2014 Most recent source

Composition

1

n-type 4H-SiC wafer with epilayer

Type Complex Compound
Formula
Role substrate
2

nitrogen-doped silicon oxide layer

N-doped SiO2 layer
Type Nano Material
Formula
Role dielectric layer
3

molybdenum

Type Single Compound
Formula Mo
Role gate

Properties

General physical and chemical properties

Property Value Nanomaterial Variant Source
interfacial trap density

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Applications

Area Application Nanomaterial Variant Source
electronics

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Characterization

Biological effects

Preparation

Method 1

Type: Chemical synthesis
Source:
Starting materials
  • n-type 4H-SiC wafer with epilayer
  • oxygen
  1. dcl0LA
Product

4H-SiC metal oxide semiconductor capacitor

Size: not specified

Medium/Support: none

Method 2

Type: Chemical synthesis
Source:
Starting materials
  • n-type 4H-SiC wafer with epilayer
  • oxygen
  1. hrVuoz
Product

4H-SiC metal oxide semiconductor capacitor

Size: not specified

Medium/Support: none

Method 3

Type: Chemical synthesis
Source:
Starting materials
  • n-type 4H-SiC wafer with epilayer
  • oxygen
  1. fauLdF
Product

4H-SiC metal oxide semiconductor capacitor

Size: not specified

Medium/Support: none

Method 4

Type: Chemical synthesis
Source:
Starting materials
  • n-type 4H-SiC wafer with epilayer
  • oxygen
  1. AY1Vsz
Product

4H-SiC metal oxide semiconductor capacitor

Size: not specified

Medium/Support: none

References

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