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InGaN/GaN multiple quantum well light-emitting diode with p-InGaN hole reservoir layer

Based on

1 Articles
2014 Most recent source

Composition

1

sapphire

Type Single Compound
Formula Al2O3
Role substrate
2

gallium nitride

Type Single Compound
Formula GaN
Role nucleation layer
3

low temperature gallium(III) nitride

Type
Formula GaN
Role
4

n-doped gallium(III) nitride

n-GaN
Type
Formula
Role
5

In0.16Ga0.84N/GaN multiple quantum wells

In0.16Ga0.84N/GaN MQW
Type
Formula
Role
6

p-InxGa1-xN gradually increase hole reservoir layer

p-InxGa1-xN layer p-InxGa1-xN GIHRL
Type Complex Compound
Formula
Role hole reservoir layer
7

p-doped gallium(III) nitride

p-GaN
Type
Formula
Role
8

p-doped aluminium gallium nitride

p-Al0.15Ga0.85N
Type Complex Compound
Formula
Role hole transport layer
9

p-doped gallium(III) nitride

p-GaN
Type
Formula
Role

Properties

General physical and chemical properties

Property Value Source

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Applications

Area Application Source

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Characterization

Biological effects

Preparation

References

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