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Ge/GeOx NW-based MOS resistive switching memory device

Based on

1 Articles
2013 Most recent source

Composition

1

p-type silicon

Type Complex Compound
Formula
Role substrate
2

silicon dioxide

silicic oxide silica
Type Single Compound
Formula SiO2
Role tunneling layer
3

Ge/GeOx core-shell nanowires

Ge/GeOx NW
Type Nano Material
Formula
Role switching material
4

aluminium oxide

aluminum oxide alumina
Type Single Compound
Formula Al2O3
Role tunneling layer
5

iridium oxide layer

IrOx layer
Type Nano Material
Formula
Role top electrode

Properties

General physical and chemical properties

Property Value Source
capacitance dependent on sweeping voltage

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Applications

Area Application Source
data storage

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Characterization

Biological effects

Preparation

Method 1

Type: Chemical synthesis
Source:
Starting materials
  • p-type silicon
  • oxygen
Product

Ge/GeOx NW-based MOS resistive switching memory device

References

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