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twin poly-Si fin field-effect transistor electrically erasable programmable read-only memory

Based on

1 Articles
2013 Most recent source

Composition

1

silicon

Type Single Compound
Formula Si
Role substrate
2

silicon dioxide

silicic oxide silica
Type Single Compound
Formula SiO2
Role dielectric layer
3

silicon nanowires

Si NW
Type
Formula
Role
4

silicon dioxide

silicic oxide silica
Type Single Compound
Formula SiO2
Role gate dielectrics
5

boron difluoride-doped silicon

p+ silicon
Type Complex Compound
Formula
Role source
6

boron difluoride-doped silicon

p+ silicon
Type Complex Compound
Formula
Role drain
7

boron difluoride-doped silicon

p+ silicon
Type Complex Compound
Formula
Role gate
8

silicon dioxide

silicic oxide silica
Type Single Compound
Formula SiO2
Role passivation layer
9

aluminium-silicon-copper alloy

AlSiCu
Type
Formula
Role
10

boron difluoride-doped silicon

p+ silicon
Type Complex Compound
Formula
Role floating gate

Properties

General physical and chemical properties

Property Value Source
electric field distribution dependent on band-to-band tunneling induced hot electron injection

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Applications

Area Application Source
data storage

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Characterization

Biological effects

Preparation

Method 1

Type: Chemical synthesis
Source:
Starting materials
  • silicon
  • oxygen
Product

twin poly-Si fin field-effect transistor electrically erasable programmable read-only memory

References

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