Fast insight into nanotechnology

Access easily searchable nanoscience data, synthesis methods and literature

resistive random access memory device with GdOx switching material

Based on

1 Articles
2013 Most recent source

Composition

1

SiO2/Si substrate

Type Complex Compound
Formula
Role substrate
2

surface oxidized tungsten layer

tungsten layer W layer
Type Nano Material
Formula
Role bottom electrode
3

hole-patterned SiO2 layer

Type
Formula
Role
4

gadolinium oxide

Type Single Compound
Formula GdO(x)
Role switching layer
5

iridium oxide

Type Single Compound
Formula IrO(x)
Role top electrode

Properties

General physical and chemical properties

Property Value Source
electric current dependent on cycle number

4 more entries available to subscribers only.

Or, view sample content

Applications

Area Application Source
data storage

0 more entry available to subscribers only.

Or, view sample content

Characterization

Biological effects

Preparation

Method 1

Type: Chemical synthesis
Source:
Starting materials
Product

resistive random access memory device with GdOx switching material

References

Full content is available to subscribers only

To view content please choose from the following:

We use cookies to improve your experience with our site. More information

Sign up for a free trial