Fast insight into nanotechnology

Access easily searchable nanoscience data, synthesis methods and literature

resistive random access memory device with GdOx switching material

Based on

1 Articles
2013 Most recent source

Composition

1

SiO2/Si substrate

Type Complex Compound
Formula
Role substrate
2

surface oxidized tungsten layer

tungsten layer W layer
Type Nano Material
Formula
Role bottom electrode
3

hole-patterned SiO2 layer

Type
Formula
Role
4

gadolinium oxide

Type Single Compound
Formula GdO(x)
Role switching layer
5

iridium oxide

Type Single Compound
Formula IrO(x)
Role top electrode

Properties

General physical and chemical properties

Property Value Source

Full content is available to subscribers only

To view content please choose from the following:

Applications

Area Application Source

Full content is available to subscribers only

To view content please choose from the following:

Characterization

Biological effects

Preparation

Method 1

Type: Chemical synthesis
Source:
Starting materials
Product

resistive random access memory device with GdOx switching material

References

Full content is available to subscribers only

To view content please choose from the following:

We use cookies to improve your experience with our site. More information

Sign up for a free trial