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InGaN-based multiple quantum well yellow light-emitting diode

Based on

1 Articles
2014 Most recent source

Composition

1

silicon

Type Single Compound
Formula Si
Role substrate
2

graded aluminium gallium nitride

Type Complex Compound
Formula
Role buffer layer
3

n-type gallium nitride

n-GaN
Type
Formula
Role
4

low temperature silicone-doped gallium nitride

LT-GaN
Type
Formula
Role
5

In0.04Ga0.96N/GaN multiple quantum wells

In0.04Ga0.96N/GaN super lattice In0.04Ga0.96N/GaN MQW In0.04Ga0.96N/GaN SL
Type
Formula
Role
6

In0.3Ga0.7N/GaN multiple quantum wells

In0.3Ga0.7N/GaN MQW
Type
Formula
Role
7

p-type aluminium gallium nitride

p-Al0.2Ga0.8N
Type Complex Compound
Formula
Role hole transport layer
8

p-type gallium nitride

p-GaN
Type
Formula
Role
9

silver

Type Single Compound
Formula Ag
Role reflectors

Properties

General physical and chemical properties

Property Value Nanomaterial Variant Source
dominant wavelength

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Applications

Area Application Nanomaterial Variant Source
lighting devices

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Characterization

Method Nanomaterial Variant Source
electroluminescence

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Biological effects

Preparation

References

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