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InGaN/GaN light-emitting diode

Based on

1 Articles
2014 Most recent source

Composition

1

sapphire

Type Single Compound
Formula Al2O3
Role substrate
2

low temperature aluminium nitride

LT-AlN
Type Single Compound
Formula AlN
Role nucleation layer
3

high temperature aluminium nitride

HT-AlN
Type Single Compound
Formula AlN
Role nucleation layer
4

gallium(III) nitride

gallium nitride
Type Single Compound
Formula GaN
Role buffer layer
5

silicon-doped gallium nitride

n-type gallium nitride
Type Complex Compound
Formula
Role n-type semiconductor layer
6

InGaN/GaN multiquantum-well

InGaN/GaN MQW
Type
Formula
Role
7

magnesium-doped gallium nitride

p-type gallium nitride
Type Complex Compound
Formula
Role p-type semiconducting layer

Properties

General physical and chemical properties

Property Value Source

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Applications

Area Application Source

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Characterization

Method Source

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Biological effects

Preparation

Method 1

Type: Chemical synthesis
Source:
Starting materials
  • ammonia
  • trimethyl aluminum
  • sapphire
  1. tTcnXw8XU8YXQ3roYR8d7MQC7wG8
  2. Y03FMTiy
  3. RHBrY
Product

InGaN/GaN light-emitting diode

References

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