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GaAs-based resonant tunneling diode on Si substrate

Based on

1 Articles
2013 Most recent source

Composition

1

GaAs-on-Si wafer

Type Complex Compound
Formula
Role substrate
2

gallium arsenide

Type Single Compound
Formula GaAs
Role buffer layer
3

gallium arsenide/aluminium arsenide superlattice

GaAs/AlAs superlattice
Type
Formula
Role
4

nitrogen-doped gallium arsenide

Type Complex Compound
Formula
Role Ohmic contacts
5

In0.1Ga0.9As/GaAs quantum well

Type
Formula
Role
6

aluminium(III) arsenide

aluminium arsenide aluminum arsenide
Type Single Compound
Formula AlAs
Role barrier layer
7

In0.1Ga0.9As/GaAs quantum well

Type
Formula
Role
8

aluminium(III) arsenide

aluminium arsenide aluminum arsenide
Type Single Compound
Formula AlAs
Role barrier layer
9

In0.1Ga0.9As/GaAs quantum well

Type
Formula
Role
10

nitrogen-doped gallium arsenide

Type Complex Compound
Formula
Role Ohmic contacts

Properties

General physical and chemical properties

Property Value Source
electric current dependent on stress

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Sensor properties

Type of sensor Sensor property Source
strain sensor

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Applications

Area Application Source
sensors (excluding biosensors)

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Characterization

Method Source
photoluminescence dependent on strain

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Biological effects

Preparation

Method 1

Type: Chemical synthesis
Source:
Starting materials
  • arsenic
  • gallium
  • GaAs-on-Si wafer
Product

GaAs-based resonant tunneling diode on Si substrate

References

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