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Ge/SiGe quantum dot infrared photodetector on SiGe virtual substrate

Based on

1 Articles
2013 Most recent source

Composition

1

p-doped silicon

Type Complex Compound
Formula
Role substrate
2

Si1-xGex alloy, x = 0.5

silicon germanium silicon-germanium Si-Ge alloy Si0.5Ge0.5
Type Single Compound
Formula Si0.5Ge0.5
Role buffer layer
3

silicon-germanium

Type Single Compound
Formula Si0.6Ge0.4
Role virtual substrate
4

Ge/SiGe quantum dots

Type Nano Material
Formula
Role photoactive layer
5

silicon-germanium

Type Single Compound
Formula Si0.6Ge0.4
Role buffer layer
6

B-doped Si0.6Ge0.4

Type Complex Compound
Formula
Role top contact

Properties

General physical and chemical properties

Property Value Nanomaterial Variant Source
background limited performance temperature

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Sensor properties

Type of sensor Sensor property Nanomaterial Variant Source
light sensor

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Applications

Area Application Nanomaterial Variant Source
sensors (excluding biosensors)

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Characterization

Biological effects

Preparation

Method 1

Type: Chemical synthesis
Source:
Starting materials
  • silicon
  • germanium
  • p-doped silicon
  1. 2ZRty
Product

Ge/SiGe quantum dot infrared photodetector on SiGe virtual substrate

Size: not specified

Medium/Support: none

References

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