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graphene-based field effect transistor

Based on

1 Articles
2011 Most recent source

Composition

1

silicon

Type
Formula Si
Role
2

silicon oxide layer

SiO2 layer
Type
Formula
Role
3

graphene

Type
Formula
Role
4

5 nm thick chromium layer

chromium layer chromium film Cr layer Cr film Cr
Type
Formula
Role
5

gold source/drain electrode

100 nm thick gold layer 100 nm-thick gold layer gold sacrificial film planar gold film gold electrode gold substrate gold coating Au thin film gold target gold layer gold wafer flat gold gold film Au layer Au film
Type
Formula
Role

Properties

General physical and chemical properties

Property Value Source
charge carrier mobility dependent on hole/electron

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Applications

Area Application Source
diagnostics

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Characterization

Biological effects

Preparation

Method 1

Type: Physical formation
Source:
Starting materials
  • silicon dioxide
  • silicon
Product

graphene-based field effect transistor

Method 2

Type: Physical formation
Source:
Starting materials
  • silicon dioxide
  • silicon
Product

graphene-based field effect transistor

Method 3

Type: Physical formation
Source:
Starting materials
  • silicon dioxide
  • silicon
Product

graphene-based field effect transistor

Method 4

Type: Physical formation
Source:
Starting materials
  • silicon dioxide
  • silicon
Product

graphene-based field effect transistor

References

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