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nanotube field-effect transistor

Based on

1 Articles
2011 Most recent source

Composition

1

silicon

Type
Formula Si
Role
2

silicon oxide nanolayer

200 nm thick SiO2 layer SiO2 passivation layer silicon dioxide layer silicon dioxide film silica layer silica film SiO2 layer SiO2 film SiO2 film
Type
Formula
Role
3

titanium film

Ti layer Ti film
Type
Formula
Role
4

gold source/drain electrode

100 nm thick gold layer 100 nm-thick gold layer gold sacrificial film planar gold film gold electrode gold substrate Au thin film gold coating gold target gold layer gold wafer gold film flat gold Au layer Au film
Type
Formula
Role
5

carbon nanotubes

Type
Formula
Role
6

C136H160N16O52Zn

Type
Formula C136H160N16O52Zn
Role

Properties

General physical and chemical properties

Property Value Source
conductance

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Applications

Area Application Source
sensors (excluding biosensors)

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Characterization

Biological effects

Preparation

Method 1

Type: Physical formation
Source:
Starting materials
  • silicon dioxide
  • gold
  • silicon
See all (4)
  1. OUn4ahR1jAK3X2pBMSzGoclMlfNBXJxqUkBl0WzkQS82QO0
Product

nanotube field-effect transistor

References

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