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three-terminal carbon nanotube-based field-effect transistor

Based on

1 Articles
2011 Most recent source

Composition

1

n-doped silicon

Type
Formula
Role
2

100 nm thick SiO2 substrate

100 nm-thick silica layer silicon oxide nanolayer 100 nm thick SiO2 layer 100-nm-thick SiO2 layer silicon dioxide film SiO2 insulator layer silicon oxide layer silica nanofilm SiO2 nanofilm silica layer silica film SiO2 layer SiO2 layer SiO2 film
Type
Formula
Role
3

scandium contact

Type
Formula
Role
4

single-walled carbon nanotubes

SWCNT
Type
Formula
Role
5

poly(methyl methacrylate) film

PMMA film
Type
Formula
Role

Properties

General physical and chemical properties

Property Value Source
conversion efficiency

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Applications

Area Application Source
optoelectronics

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Characterization

Method Source
electroluminescence

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Biological effects

Preparation

Method 1

Type: Physical formation
Source:
Starting materials
  • silicon dioxide
  • n-doped silicon
Product

three-terminal carbon nanotube-based field-effect transistor

References

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