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nonvolatile polymeric ferroelectric field effect transistor memory

Based on

1 Articles
2011 Most recent source

Composition

1

degenerately doped silicon

Type
Formula
Role
2

methyltrimethoxysilane-tetraethylorthosilicate copolymer lamellae

poly(methyltrimethoxysilane-co-tetraethylorthosilicate) lamellae
Type
Formula
Role
3

poly(vinylidene fluoride-co-trifluoroethylene) film

PVDF-TrFE film
Type
Formula
Role
4

triisopropylsilylethynyl-pentacene

TIPS-PEN
Type
Formula C33H34Si
Role
5

gold film

Type
Formula
Role

Properties

General physical and chemical properties

Property Value Source
data retention capability dependent on on-off state

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Applications

Area Application Source
electronics

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Characterization

Biological effects

Preparation

Method 1

Type: Chemical synthesis
Source:
Starting materials
  • methyltrimethoxysilane-tetraethylorthosilicate copolymer
  1. Av6fqp92mVbgUXSCMCmsv3ZYCn9DUtfRpySViT
  2. JmblRTYcPzdXWHXHgb0xKdDgYZKRJDarG82mdNVawbzaN4WCzGb5D14WKZd90ZSw2EbPal9gtGebMxvC0Y3yI
Product

nonvolatile polymeric ferroelectric field effect transistor memory

References

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