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high electron mobility transistor

Based on

1 Patents
2013 Most recent source

Composition

1

substrate material

Type Variant
Formula
Role substrate
2

ductile metal

Type Variant
Formula
Role compliant buffer layer
3

aluminium gallium antimonide

AlGaSb
Type Complex Compound
Formula
Role buffer layer
4

aluminium(III) antimonide

aluminium antimonide aluminum antimonide AlSb
Type Single Compound
Formula AlSb
Role barrier layer
5

indium arsenide quantum well

InAs QW
Type Nano Material
Formula
Role channel layer
6

delta-doped indium arsenide quantum well

delta-doped InAs QW
Type Nano Material
Formula
Role channel layer
7

indium(III) arsenide

indium monoarsenide indium arsenide
Type Single Compound
Formula InAs
Role contacting layer

Properties

Applications

Area Application Nanomaterial Variant Source
electronics

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Characterization

Biological effects

Preparation

References

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