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C10-DNT-VV device

Based on

1 Articles
2013 Most recent source

Composition

1

n-doped silicon

n-type silicon N-type silicon n-doped Si silicon
Type
Formula Si
Role
2

silicon dioxide

silicic oxide silica
Type Single Compound
Formula SiO2
Role substrate
3

n-decyltriethoxysilane

decyltriethoxysilane DTS
Type Single Compound
Formula C16H36O3Si
Role self-assembled monolayer
4

2,10-didecyldinaphthodinaphtho[2,3-b:2',3'-d]thiophene

C10-DNT-VV
Type Single Compound
Formula C40H52S
Role semiconductor layer
5

2,3,5,6-tetrafluoro-7,7,8,8,-tetracyanoquinodimethane

2,3,5,6-tetrafluoro-7,7,8,8-tetracyanoquinodimethane 7,7,8,8-tetracyano-2,3,5,6-tetrafluoroquinodimethane tetrafluoro-7,7,8,8-tetracyanoquinodimethane tetrafluoro-tetracyano-quinodimethane tetrafluoro tetracyanoquinodimethane tetrafluoro-tetracyanoquinodimethane F4-TCNQ F4-TCNQ F4TCNQ F4TCNQ
Type Single Compound
Formula C12F4N4
Role electrodes
6

gold

Type Single Compound
Formula Au
Role electrodes

Properties

General physical and chemical properties

Property Value Nanomaterial Variant Source
current on-off ratio

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Applications

Area Application Nanomaterial Variant Source
tools/devices

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Characterization

Method Nanomaterial Variant Source
atomic force microscopy

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Biological effects

Preparation

Method 1

Type: Physical formation
Source:
Starting materials
  • silicon dioxide
  • n-doped silicon
  • n-decyltriethoxysilane
Product

C10-DNT-VV device

Size: not specified

Medium/Support: none

Method 2

Type: Physical formation
Source:
Starting materials
  • silicon dioxide
  • n-doped silicon
  • n-decyltriethoxysilane
  1. bwyJ4rDRiEYLdsGC0zKNxSq7TaqJZhNJZcC0cmmeVRGqz9Tph
Product

C10-DNT-VV device

Size: not specified

Medium/Support: none

References

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