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three-Pd-interlayer SiOx memory device

Based on

1 Articles
2014 Most recent source

Composition

1

SiO2/Si substrate

Type Complex Compound
Formula
Role substrate
2

platinum

Type Single Compound
Formula Pt
Role bottom electrode
3

silicon-rich silicon oxide

amorphous silicon suboxide amorphous silicon oxide silicon-rich oxide silicon suboxide amorphous SiOx silicon oxide a-SiOx glass SRSO SiOx SRO
Type Single Compound
Formula SiO(x)
Role dielectric layer
4

palladium

Type Single Compound
Formula Pd
Role conducting layer
5

silicon-rich silicon oxide

amorphous silicon suboxide amorphous silicon oxide silicon-rich oxide silicon suboxide amorphous SiOx silicon oxide a-SiOx glass SRSO SiOx SRO
Type Single Compound
Formula SiO(x)
Role dielectric layer
6

palladium

Type Single Compound
Formula Pd
Role conducting layer
7

silicon-rich silicon oxide

amorphous silicon suboxide amorphous silicon oxide silicon-rich oxide silicon suboxide amorphous SiOx silicon oxide a-SiOx glass SRSO SiOx SRO
Type Single Compound
Formula SiO(x)
Role dielectric layer
8

palladium

Type Single Compound
Formula Pd
Role conducting layer
9

silicon-rich silicon oxide

amorphous silicon suboxide amorphous silicon oxide silicon-rich oxide silicon suboxide amorphous SiOx silicon oxide a-SiOx glass SRSO SiOx SRO
Type Single Compound
Formula SiO(x)
Role dielectric layer
10

palladium

Type Single Compound
Formula Pd
Role top electrode

Properties

General physical and chemical properties

Property Value Source

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Applications

Area Application Source

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Characterization

Biological effects

Preparation

Method 1

Type: Physical formation
Source:
Starting materials
  • SiO2/Si substrate
  • platinum
Product

three-Pd-interlayer SiOx memory device

References

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