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C10-DNT-VW device

Based on

1 Articles
2013 Most recent source

Composition

1

n-doped silicon

n-type silicon N-type silicon n-doped Si silicon
Type
Formula Si
Role
2

silicon dioxide

silicic oxide silica
Type Single Compound
Formula SiO2
Role substrate
3

1H,1H,2H,2H-perfluorodecyltriethoxysilane

heptadecafluorodecyltrimethoxysilane heptadecafluorodecyltriethoxysilane perfluorodecyltriethoxysilane PFDTES PFDTS PFTS FDTS
Type Single Compound
Formula C16H15F21O3Si
Role self-assembled monolayer
4

2,10-didecyldinaphtho[2,3-b:2',3'-d]thiophene

C10-DNT-VW
Type Single Compound
Formula C40H52S
Role semiconductor layer
5

2,3,5,6-tetrafluoro-7,7,8,8,-tetracyanoquinodimethane

2,3,5,6-tetrafluoro-7,7,8,8-tetracyanoquinodimethane 7,7,8,8-tetracyano-2,3,5,6-tetrafluoroquinodimethane tetrafluoro-7,7,8,8-tetracyanoquinodimethane tetrafluoro-tetracyano-quinodimethane tetrafluoro tetracyanoquinodimethane tetrafluoro-tetracyanoquinodimethane F4-TCNQ F4-TCNQ F4TCNQ F4TCNQ
Type Single Compound
Formula C12F4N4
Role electrodes
6

gold

Type Single Compound
Formula Au
Role electrodes

Properties

General physical and chemical properties

Property Value Source
current on-off ratio

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Applications

Area Application Source
tools/devices

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Characterization

Method Source
atomic force microscopy

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Biological effects

Preparation

Method 1

Type: Physical formation
Source:
Starting materials
  • 1H,1H,2H,2H-perfluorodecyltriethoxysilane
  • silicon dioxide
  • n-doped silicon
Product

C10-DNT-VW device

Method 2

Type: Physical formation
Source:
Starting materials
  • 1H,1H,2H,2H-perfluorodecyltriethoxysilane
  • silicon dioxide
  • n-doped silicon
  1. do1bn1ATgllr5fE7plilENOT7djObqz3EhxCMgrOH1P8mXoVv
Product

C10-DNT-VW device

References

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