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GaAs/AlGaAs high electron mobility photo-transistor with V-groove-shaped gold plasmonic crystal

Based on

1 Articles
2014 Most recent source

Composition

1

gallium arsenide

Type Single Compound
Formula GaAs
Role substrate
2

intrinsic doped gallium(III) arsenide

i-GaAs
Type Complex Compound
Formula
Role buffer layer
3

GaAs/Al0.42Ga0.58As superlattice

Type Nano Material
Formula
Role active layer
4

intrinsic doped aluminium gallium arsenide

i-AlGaAs
Type Complex Compound
Formula
Role deep spacer
5

silicon doped aluminium gallium arsenide

Si-doped AlGaAs
Type
Formula
Role
6

intrinsic doped aluminium gallium arsenide

i-AlGaAs
Type Complex Compound
Formula
Role top spacer
7

GaAs layer with V-groove-shaped gold plasmonic crystal

Type
Formula
Role
8

gold

Type Single Compound
Formula Au
Role Schottky gate
9

nickel/germanium/gold tri-layer

Ni-Ge-Au multilayer
Type Nano Material
Formula
Role source
10

nickel/germanium/gold tri-layer

Ni-Ge-Au multilayer
Type Nano Material
Formula
Role drain
11

dielectric

Type
Formula
Role

Properties

General physical and chemical properties

Property Value Nanomaterial Variant Source
electric field enhancement distribution

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Applications

Characterization

Biological effects

Preparation

References

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