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ferroelectric-gate field effect transistor

Based on

1 Articles
2013 Most recent source

Composition

1

silicon dioxide

silicic oxide silica
Type Single Compound
Formula SiO2
Role substrate
2

gold

Type Single Compound
Formula Au
Role source
3

gold

Type Single Compound
Formula Au
Role drain
4

poly(3-hexylthiophene)

P3HT
Type
Formula
Role
5

mixture of substance based on (poly(vinylidene fluoride-trifluoroethylene-chlorotrifluoroethylene)/poly(vinylidene fluoride-trifluoroethylene-chlorotrifluoroethylene)/poly(vinylidene fluoride-co-trifluoroethylene)/poly(vinylidene fluoride-co-trifluoroethylene))

Type Complex Compound
Formula
Role gate insulator
6

aluminium

aluminum
Type Single Compound
Formula Al
Role gate

Properties

General physical and chemical properties

Property Value Source
source-drain current

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Applications

Area Application Source
data storage

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Characterization

Biological effects

Preparation

Method 1

Type: Physical formation
Source:
Starting materials
  • silicon dioxide
  1. EUFzL6jz7J
  2. I8O6Kiu
Product

ferroelectric-gate field effect transistor

References

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