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Cu/GeOx/W cross-point memory device

Based on

1 Articles
2013 Most recent source

Composition

1

p-type silicon

Type Complex Compound
Formula
Role substrate
2

silicon dioxide

silicic oxide silica
Type Single Compound
Formula SiO2
Role dielectric layer
3

tungsten bars

W bars
Type Nano Material
Formula
Role bottom electrode
4

GeOx layers

Type Nano Material
Formula
Role switching layer
5

copper/aluminium bilayers

Cu/Al bilayers
Type Nano Material
Formula
Role top electrode

Properties

General physical and chemical properties

Property Value Source

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Applications

Area Application Source

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Characterization

Biological effects

Preparation

Method 1

Type: Chemical synthesis
Source:
Starting materials
  • SiO2/Si substrate
  • tungsten
  1. 935IKV
  2. qB
  3. KauJF
Product

Cu/GeOx/W cross-point memory device

References

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