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depleted-heterojunction photovoltaic device employing p/p+-type 3-mercaptobutyric acid/3-mercaptopropionic acid-treated PbS colloidal quantum dot active layer

Based on

1 Articles
2013 Most recent source

Composition

1

soda-lime-silica glass

soda-lime glass glass
Type Complex Compound
Formula
Role substrate
2

fluorine doped tin oxide

fluorine doped tin oxide SnO2:F SnO2:F FTO
Type Complex Compound
Formula
Role conducting layer
3

titanium(IV) oxide

titanium dioxide titanium oxide titania
Type Single Compound
Formula TiO2
Role n-type semiconductor layer
4

3-mercaptobutyric acid-capped CdCl2-treated PbS colloidal quantum dots

3MBA-capped CdCl2-treated PbS quantum dots 3MBA-capped CdCl2-treated PbS CQD
Type Nano Material
Formula
Role p-type absorber layer
5

3-mercaptopropionic acid-capped CdCl2-treated PbS colloidal quantum dots

MPA-capped CdCl2-treated PbS quantum dots MPA-capped CdCl2-treated PbS CQD
Type Nano Material
Formula
Role p-type absorber layer
6

molybdenum(VI) oxide

molybdenum trioxide
Type Single Compound
Formula MoO3
Role Ohmic contacts
7

gold

Type Single Compound
Formula Au
Role top electrode
8

silver

Type Single Compound
Formula Ag
Role top electrode

Properties

General physical and chemical properties

Property Value Nanomaterial Variant Source
dark current

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Applications

Area Application Nanomaterial Variant Source
optoelectronics

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Characterization

Method Nanomaterial Variant Source
scanning electron microscopy

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Biological effects

Preparation

Method 1

Type: Chemical synthesis
Source:
Starting materials
  1. 8MxbA7KHN3lMOcFOS
Product

depleted-heterojunction photovoltaic device employing p/p+-type 3-mercaptobutyric acid/3-mercaptopropionic acid-treated PbS colloidal quantum dot active layer

Size: not specified

Medium/Support: none

References

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