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Al/GeOx/W cross-point memory device

Based on

1 Articles
2013 Most recent source

Composition

1

p-type silicon

Type Complex Compound
Formula
Role substrate
2

silicon dioxide

silicic oxide silica
Type Single Compound
Formula SiO2
Role dielectric layer
3

tungsten

Type Single Compound
Formula W
Role bottom electrode
4

GeOx layers

Type Nano Material
Formula
Role switching layer
5

aluminium layers

Al layers
Type Nano Material
Formula
Role top electrode

Properties

General physical and chemical properties

Property Value Source
electric current dependent on current compliance

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Applications

Area Application Source
data storage

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Characterization

Biological effects

Preparation

Method 1

Type: Chemical synthesis
Source:
Starting materials
  • SiO2/Si substrate
  • tungsten
  1. g8EJik
  2. Qg
  3. 1FkP2
Product

Al/GeOx/W cross-point memory device

References

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