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resistance switching memory device based on sericin doped with gold nanoparticles

Based on

1 Articles
2013 Most recent source

Composition

1

silicon

Type Single Compound
Formula Si
Role substrate
2

silicon dioxide

silicic oxide silica
Type Single Compound
Formula SiO2
Role substrate
3

titanium

Type Single Compound
Formula Ti
Role adhesion layer
4

gold

Type Single Compound
Formula Au
Role bottom electrode
5

gold-doped sericin

Type Nano Material
Formula
Role resistive switching layer
6

silver

Type Single Compound
Formula Ag
Role top electrode

Properties

General physical and chemical properties

Property Value Source
electric current dependent on filler concentration

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Applications

Area Application Source
electronics

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Characterization

Biological effects

Preparation

Method 1

Type: Physical formation
Source:
Starting materials
  • titanium
  • SiO2/Si
Product

resistance switching memory device based on sericin doped with gold nanoparticles

References

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