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depleted-heterojunction photovoltaic device employing p/p+-type 3-mercaptobutyric acid/3-mercaptopropionic acid-treated PbS colloidal quantum dot active layer

Based on

1 Articles
2013 Most recent source

Composition

1

zinc oxide

Type Single Compound
Formula ZnO
Role complementary electrode
2

3-mercaptobutyric acid-capped CdCl2-treated PbS colloidal quantum dots

3MBA-capped CdCl2-treated PbS quantum dots 3MBA-capped CdCl2-treated PbS CQD
Type Nano Material
Formula
Role p-type absorber layer
3

3-mercaptopropionic acid-capped CdCl2-treated PbS colloidal quantum dots

MPA-capped CdCl2-treated PbS quantum dots MPA-capped CdCl2-treated PbS CQD
Type Nano Material
Formula
Role p-type absorber layer
4

molybdenum(VI) oxide

molybdenum trioxide
Type Single Compound
Formula MoO3
Role Ohmic contacts
5

gold

Type Single Compound
Formula Au
Role top electrode
6

silver

Type Single Compound
Formula Ag
Role top electrode

Properties

General physical and chemical properties

Property Value Nanomaterial Variant Source
capacitance dependent on particular device

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Applications

Area Application Nanomaterial Variant Source
optoelectronics

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Characterization

Biological effects

Preparation

Method 1

Type: Chemical synthesis
Source:
Starting materials
  1. Y8eU589243xyDHhpe
Product

depleted-heterojunction photovoltaic device employing p/p+-type 3-mercaptobutyric acid/3-mercaptopropionic acid-treated PbS colloidal quantum dot active layer

Size: not specified

Medium/Support: none

References

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