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organic field-effect transistor

Based on

1 Articles
2013 Most recent source

Composition

1

n-doped silicon

n-type silicon N-type silicon n-doped Si silicon
Type Single Compound
Formula Si
Role substrate
2

silicon dioxide

silicic oxide silica
Type Single Compound
Formula SiO2
Role isolator
3

4-[(10-{[3,4-bis(hexyloxy)phenyl]ethynyl}-9-anthryl)ethynyl]benzonitrile

Type Single Compound
Formula C43H41NO2
Role semiconductor layer
4

gold

Type Single Compound
Formula Au
Role drain
5

gold

Type Single Compound
Formula Au
Role source

Properties

General physical and chemical properties

Property Value Nanomaterial Variant Source
charge carrier mobility dependent on annealing temperature

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Applications

Area Application Nanomaterial Variant Source
electronics

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Characterization

Biological effects

Preparation

Method 1

Type: Physical formation
Source:
Starting materials
  • Si/SiO2
  • 4-[(10-{[3,4-bis(hexyloxy)phenyl]ethynyl}-9-anthryl)ethynyl]benzonitrile
  1. nId0GVmh6i
Product

organic field-effect transistor

Size: not specified

Medium/Support: none

References

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