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unipolar p-type PbSe nanowire-based field-effect transistor

Based on

3 Articles
2011 Most recent source

Composition

1

on silicon 250 nm thick SiO2 layer

Type
Formula
Role
2

2 nm thick titanium layer

titanium layer titanium film titanium Ti layer
Type
Formula
Role
3

18 nm thick gold layer

Au film
Type
Formula
Role
4

oxygen-doped lead selenide nanowires

oxygen-doped PbSe nanowires
Type
Formula
Role

Properties

General physical and chemical properties

Property Value Nanomaterial Variant Source
conductance dependent on titanium etching duration

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Applications

Area Application Nanomaterial Variant Source
electronics

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Characterization

Biological effects

Preparation

Method 1

Type: Chemical synthesis
Source:
Starting materials
Product

unipolar p-type PbSe nanowire-based field-effect transistor

Size: not specified

Medium/Support: none

Method 2

Type: Chemical synthesis
Source:
Product

unipolar p-type PbSe nanowire-based field-effect transistor

Size: not specified

Medium/Support: none

References

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