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unipolar n-type PbSe nanowire-based field-effect transistor

Based on

1 Articles
2011 Most recent source

Composition

1

on silicon 250 nm thick SiO2 layer

Type
Formula
Role
2

2 nm thick titanium layer

titanium layer titanium film Ti layer titanium
Type
Formula
Role
3

18 nm thick gold layer

Au film
Type
Formula
Role
4

oxygen-doped lead selenide nanowires

oxygen-doped PbSe nanowires
Type
Formula
Role
5

hydrazine

HYD
Type
Formula N2H4
Role

Properties

General physical and chemical properties

Property Value Source
drain current dependent on gate voltage

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Applications

Area Application Source
electronics

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Characterization

Biological effects

Preparation

Method 1

Type: Physical formation
Source:
Product

unipolar n-type PbSe nanowire-based field-effect transistor

References

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