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top-gated p-type unipolar graphene field-effect transistor

Based on

1 Articles
2011 Most recent source

Composition

1

on silicon 285 nm thick SiO2 layer

Type
Formula
Role
2

titanium oxide-decorated monolayer graphene

titanium oxide-decorated graphene flake
Type
Formula
Role
3

titanium

Type
Formula Ti
Role
4

gold

Type
Formula Au
Role
5

10 nm thick alumina layer

10 nm thick Al2O3 layer aluminium oxide film flat Al2O3 substrate alumina nanofilm alumina film Al2O3 layer Al2O3 film
Type
Formula
Role

Properties

General physical and chemical properties

Property Value Source
conductance

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Applications

Area Application Source
electronics

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Characterization

Biological effects

Preparation

Method 1

Type: Physical formation
Source:
Starting materials
Product

top-gated p-type unipolar graphene field-effect transistor

References

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